Kazutaka Terashima: search on Z-Library

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1

Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface

Shinji Togawa, Xinming Huang, Koji Izunome, Kazutaka Terashima, Shigeyuki Kimura

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 527 KB

english, 1995

2

Growth of highly homogeneous InSb single crystals

Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 555 KB

english, 1982

3

Density Variation of Molten Silicon Measured by an Improved Archimedian Method

Sasaki, Hitoshi, Tokizaki, Eiji, Terashima, Kazutaka, Kimura, Shigeyuki

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 844 KB

1994

4

Morphology variations on inner surface of silica crucibles depending on oxygen concentration in silicon melts

Susumu Maeda, Kensuke Takeuchi, Masaki Kato, Keisei Abe, Hideo Nakanishi, Keigo Hoshikawa, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 503 KB

english, 1998

5

Growth of ZnSe crystals by nonstoichiometric annealing

Kazutaka Terashima, Masaru Kawachi, Michiko Takena

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

6

Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon

Atsushi Ikari, Hitoshi Sasaki, Eiji Tokizaki, Kazutaka Terashima, Shigeyuki Kimura

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 246 KB

english, 1996

7

Macroscopic Uniformity of Oxygen Concentration in Czochralski Silicon Crystals Closely Related to Evaporation of SiO from the Free Surface of Melts

Maeda, Susumu, Terashima, Kazutaka

Journal:

Journal of The Electrochemical Society

Year:

2003

Language:

english

File:

PDF, 548 KB

english, 2003

8

Evaporation Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr

Huang, Xinming, Terashima, Kazutaka, Tokizaki, Eiji, Kimura, Shigeyuki, Whitby, Evan

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1019 KB

english, 1994

9

Temperature dependence of density of molten germanium measured by a newly developed Archimedian technique

Hideo Nakanishi, Kenichi Nakazato, Seiji Asaba, Keisei Abe, Susumu Maeda, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 127 KB

english, 1998

10

Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth

Suzuka Nishimura, Hidetoshi Hanamoto, Kazutaka Terashima, Satoru Matsumoto

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

11

Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs

Sato, Takashi, Terashima, Kazutaka, Emori, Haruo, Ozawa, Shoichi, Nakajima, Masato, Fukuda, Tsuguo, Ishida, Koichi

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 501 KB

1985

12

Growth of cubic GaN on Si (100) Substrates

Nishimura, Suzuka, Naritsuka, Shigeya, Terashima, Kazutaka

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 2.37 MB

english, 2006

13

Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition

Huang, Xinming, Terashima, Kazutaka, Sasaki, Hitoshi, Tokizaki, Eiji, Anzai, Yutaka, Kimura, Shigeyuki

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 120 KB

english, 1994

14

Annealing effect and impurity doping effects on the defect generation in interstitial-rich Si crystals observed by infrared microscope

Kazutaka Terashima, Suzuka Nishimura

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 234 KB

english, 2002

15

GaN on Si substrates for LED and LD applications

Suzuka Nishimura, Satoru Matsumoto, Kazutaka Terashima

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 345 KB

english, 2004

16

Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth

Terashima, Kazutaka, Katsumata, Tooru, Orito, Fumio, Fukuda, Tsuguo

Journal:

Japanese Journal of Applied Physics

Year:

1984

File:

PDF, 348 KB

1984

17

Oxygen solubility in Si melts: influence of boron addition

Keisei Abe, Takeshi Matsumoto, Susumu Maeda, Hideo Nakanishi, Keigo Hoshikawa, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 520 KB

english, 1997

18

Light scattering topography of excimer grade CaF2 crystal

Yasunao Oyama, Suzuka Nishimura, Kazutaka Terashima

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 127 KB

english, 2004

19

Precise melt composition control for LEC GaAs

Johji Nishio, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 166 KB

english, 1987

20

Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs

Kikuta, Toshio, Terashima, Kazutaka, Ishida, Koichi

Journal:

Japanese Journal of Applied Physics

Year:

1983

File:

PDF, 438 KB

1983

21

Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide

Ino, Yuji, Matsumoto, Satoru, Nishimura, Suzuka, Terashima, Kazutaka

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 438 KB

english, 2012

22

The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditions

Kazutaka Terashima, Hajime Noguchi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 138 KB

english, 2002

23

Clinical advantages of robotic gastrectomy for clinical stage I/II gastric cancer: a multi-institutional prospective single-arm study

Uyama, Ichiro, Suda, Koichi, Nakauchi, Masaya, Kinoshita, Takahiro, Noshiro, Hirokazu, Takiguchi, Shuji, Ehara, Kazuhisa, Obama, Kazutaka, Kuwabara, Shiro, Okabe, Hiroshi, Terashima, Masanori

Journal:

Year:

2018

Language:

english

File:

PDF, 1.10 MB

english, 2018

24

Growth of GaN on Si substrates using BP thin layer as a buffer

Suzuka Nishimura, Kazutaka Terashima

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 251 KB

english, 2000

25

Melt quenching technique for direct observation of oxygen transport in the Czochralski-grown Si process

Soroku Kawanishi, Shinji Togawa, Koji Izunome, Kazutaka Terashima, Shigeyuki Kimura

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 811 KB

english, 1995

26

Variation of silicon melt viscosity with boron addition

Suzuka Nishimura, Satoru Matsumoto, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 256 KB

english, 2002

27

Emissivity of liquid silicon in visible and infrared regions

Takasuka, Eiryo, Tokizaki, Eiji, Terashima, Kazutaka, Kimura, Shigeyuki

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

28

Hydrogen Radical Etching Effect on Carbon Nanotube Growth

Nagayoshi, Hiroshi, Sato, Hiroaki, Nishimura, Suzuka, Terashima, Kazutaka

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 126 KB

english, 2005

29

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

Nishimura, Suzuka, Hirai, Muneyuki, Terashima, Kazutaka

Journal:

MRS Proceedings

Year:

2011

Language:

english

File:

PDF, 6.94 MB

english, 2011

30

Stoichiometry of undoped LEC GaAs

Terashima, Kazutaka, Nishio, Johji, Okada, Akira, Washizuka, Shoichi, Watanabe, Masayuki

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 444 KB

english, 1986

31

Growth of GaN on Si substrates – roles of BP thin layer

S Nishimura, Satoru Matsumoto, Kazutaka Terashima

Journal:

Optical Materials

Year:

2002

Language:

english

File:

PDF, 447 KB

english, 2002

32

Formation of interfacial phases between silica and undoped or antimony-doped silicon melts

Huang, Xinming, Terashima, Kazutaka, Anzai, Yutaka, Tokizaki, Eiji, Sasaki, Hitoshi, Kimura, Shigeyuki

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 651 KB

english, 1994

33

Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing

Obokata, Takeshi, Matsumura, Takao, Terashima, Kazutaka, Orito, Fumio, Kikuta, Toshio, Fukuda, Tsuguo

Journal:

Japanese Journal of Applied Physics

Year:

1984

File:

PDF, 1.06 MB

1984

34

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

Takeuchi, Tomohiko, Nishimura, Suzuka, Sakuma, Tomoyuki, Matumoto, Satoru, Terashima, Kazutaka

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 770 KB

english, 2005

35

Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth: Effect of Ar Pressure

Huang, Xinming, Saitou, Keijirou, Sakai, Susumu, Terashima, Kazutaka, Hoshikawa, Keigo

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 1.42 MB

1998

36

Typical macroscopic defects in ZnSe crystals grown from the melt

Kazutaka Terashima, Michiko Takena

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 299 KB

english, 1991

37

Low temperature growth interface for growing Boron Monophosphide on Si substrates

Suzuka Nishimura, Kazutaka Terashima

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 601 KB

english, 2000

38

[IEEE 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Waikoloa, HI (2006.05.7-2006.05.12)] 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Optical Properties of Eu Doped CaF2 Crystal for Solar Cell Application

Nagayoshi, Hiroshi, Nishimura, Suzuka, Terashima, Kazutaka

Year:

2006

Language:

english

File:

PDF, 442 KB

english, 2006

39

LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process

Terashima, Kazutaka, Nakajima, Hiroaki, Fukuda, Tsuguo

Journal:

Japanese Journal of Applied Physics

Year:

1982

Language:

english

File:

PDF, 250 KB

english, 1982

40

Surface tension of a Si melt: influence of oxygen partial pressure

Xinming Huang, Shinji Togawa, Sang-Ik Chung, Kazutaka Terashima, Shigeyuki Kimura

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 498 KB

english, 1995

41

Density of molten calcium fluoride

Suguru Jingu, Xiumei Chen, Suzuka Nishimura, Yasunao Oyama, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 125 KB

english, 2002

42

Analysis of Deposits Evaporated from Boron-Doped Silicon Melt

Maeda, Susumu, Kato, Masaki, Abe, Keisei, Nakanishi, Hideo, Hoshikawa, Keigo, Terashima, Kazutaka

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 1.46 MB

english, 1997

43

Silicon Crystal Growth under Equilibrium Condition of SiO2-Si-SiO System: Equilibrium Oxygen Segregation Coefficient

Huang, Xinming, Nakazawa, Tatsuo, Terashima, Kazutaka, Hoshikawa, Keigo

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 226 KB

english, 1998

44

Effect of Impurity Doping on Density Anomalies in Molten Silicon

Kawanishi, Soroku, Sasaki, Hitoshi, Terashima, Kazutaka, Kimura, Shigeyuki

Journal:

Japanese Journal of Applied Physics

Year:

1995

File:

PDF, 2.62 MB

1995

45

10.2109/jcersj1950.88.1023_687

SUZUKI, Kazutaka, TERASHIMA, Yoshimitsu, KATO, Kimio, ITO, Suketoshi

Journal:

Journal of the Ceramic Association Japan

Year:

1980

Language:

english

File:

PDF, 1.27 MB

english, 1980

46

Low-defect InSb crystal growth by InN doping

Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

1979

Language:

english

File:

PDF, 560 KB

english, 1979

47

Density and surface tension of molten calcium fluoride

Xiumei Chen, Suguru Jinguu, Suzuka Nishimura, Yasunao Oyama, Kazutaka Terashima

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 196 KB

english, 2002

48

Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing

Terashima, Kazutaka, Tokizaki, Eiji, Uedono, Akira, Tanigawa, Shoichiro

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 730 KB

1993

49

Control of oxygen concentration in heavily antimony-doped Czochralski Si crystals by ambient argon pressure

Koji Izunome, Xinming Huang, Shiniji Togawa, Kazutaka Terashima, Shigeyuki Kimura

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 276 KB

english, 1995

50

Silicon melt density — problems of Archimedean technique

Kazutaka Terashima, Kazuya Kanno

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

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